Areas of Application
The device is to be used for ion implantation
of materials with single/double-charged
metal ions (Be, Fe, Cr, Ni, Zr, Mo, W, etc.)
and simulation studies of ion irradiation
effects on construction materials of nuclear
and thermonuclear industry
Specifi cation
Ions
Ion current, μA
Ion energy, keV
Ion charge
Power consumption, W
IPR Protection
IPR1, IPR2
Be, Fe, Cr, Ni,
Zr, Mo, W
10-200
30
+1, +2
1000
Advantages
The metal ion source enables to generate
beams of single- and double-charged metal
ions based on ion-plasma sputtering.
The technique applied for creation of operating
environment enables forming an atomic
concentration and a high-density plasma
of almost all metals (Be, Fe, Cr, Ni, Zr, Mo, W
and others) without high-temperature
heating of the source
Stage of Development.
Suggestions for Commercialization
IRL3, TRL4
Manufacture of single samples by ourselves
or jointly with potential partners
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