SUBSTANCE: invention refers to very low resistance films (VLR films). A method for improving working characteristics of the very low resistance film containing a very low resistance material having a crystalline structure comprises: laminating a modifying material on a VLR material interface, which is substantially parallel with a c-plane of the crystalline structure of the VLR material of the VLR film, to create the modified VLR film; the modified VLR film possesses the improved working characteristics as compared to the VLR free from the modifying material.
EFFECT: invention provides producing the VLR films with the improved working characteristics.
38 cl, 46 dwg
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