IDEA #4N74A7 THE DEVICE FOR HIGH-FREQUENCY OVER-VOLTAGE REJECTION (FREQUENCY-DEPENDENT RESISTOR) IN HIGH-VOLTAGE SYSTEMS AND ALTERNATING VOLTAGE ONES

THE DEVICE FOR HIGH-FREQUENCY OVER-VOLTAGE REJECTION (FREQUENCY-DEPENDENT RESISTOR) IN HIGH-VOLTAGE SYSTEMS AND ALTERNATING VOLTAGE ONES leading to Description The main absorber of frequency-dependent resistor, which is ferromagnetic sheath, has the component the permeability of which has the maximum 0,1-20MHz interval. As a result of this the skin-effect depth in this region strongly decreases the strong increase of resistor resistance in this frequency region and the decrease of high-frequency current (over- voltage) component. The ferrite, which is used in radio engineering industry for contour frequency the capacity of tuning and etc., in ferromagnetic component. The theoretic model describing the carrying out of electromagnetic processes and functioning of resistor sheath has been formed. The production technique of ferromagnetic sheath formation has been developed and frequency- dependent resistor has been created. is chosen Innovative Aspects and Main Advantages The filtering of high-frequency over-voltages in the devices and high voltage systems. Areas of Application Power engineering, electro-technical devices, ecology. Stage of Development Development stage; Laboratory tested; Pilot sample is available. Fig.1. a) Voltage oscillogram: 1 - behind the frequency-dependent resistor; 2 - before the frequency-dependent resistor; b) The construction of frequency-dependent resistor: 1. Terminal clamp; 2. Metallic rode; 3. Sheath of frequency-dependent resistor; 4. Isolating resistor frame. Fig.2. The experimental (1) and theoretical (2) absorbing spectrums of sheath of frequency-dependent resistor in frequency interval 10-107 Hz. Contact Details Institute of Physics Contact person: Talat R.Mehdiyev, Arif M.Hashimov, Rauf .Mehdizadeh, Kamil Qurbanov Address: 33, H. Javid Avenue AZ1143, Baku, Azerbaijan Tel./Fax: (994 12) 439 3223 E-mail: joph@physics.ab.az