IDEA #8BUOVS SILICON PRESSURE SENSORS

SENSORS SILICON PRESSURE SENSORS the profiled sensors comprises Description Two types of pressure sensors have been developed for measurement of absolute, differential and gauge pressure:- (i) of the pure non aggressive; and (ii) of aggressive liquids and gases. Sensitive element of the pressure silicon diaphragm fixed on the silicon buffer plate. The integral sensitive element is implanted into the plane surface of the silicon diaphragm and has differential structure that makes it non-sensitive to the “parasitic” thermo-elastic and elastic strains. These strains could arise in process of manufacturing and assembling of pressure sensors. Specification for absolute differential and gauge pressure measurement of non- aggressive liquids and gases without solid contamination: Pressure range for operation (kPа): 0-1; 0-2; 0-4; 0-10; 0-20; 0-4; 0-100; 0-200; 0-400; 0-600; 0-1000; 0-1500 Supply voltage (V): Full scale output (mV): Operating temperature (0С): Accuracy less than (%): Dimensions (mm): 6.0 50 10 40 +90 0.1 30 25 30 Specification for absolute, differential and gauge pressure measurement of aggressive liquids and gases: Pressure range for operation (kPа): 0-40; 0-100; 0-200; 0-400; 0-600; 0-1000; 0-1500; 0-4000; 0-6000 Supply voltage (V): Full scale output (mV): Operating temperature (0С): Accuracy less than (%): 6.0 50 10 40 +80 0.2 Innovative Aspect and Main Advantages Performance: The performance of pressure sensors is based on the patented sensitive element. There are two Ukrainian patents UA 18307 С1 and UA 19080. Accuracy: Computer trimming on chip calibration of the zero off- set and temperature compensation resistors provide accurate pressure measurement in a wide temperature range. Choice of Measurement: Available for differential, absolute and gauge pressure measurement of neutral, aggressive liquids and gasses. Areas of Applications power mechanical engineering; aircraft; communication systems; control of an environment systems; oil refining and chemistry; for investigation, equipment extraction, transportation, processing and distribution of power resources; industrial power; measuring and control equipment. Stage of Development Pilot samples. Contact Details Contact person: S.I. Kozlowskij V. Lashkaryov Institute of Semiconductors Physics of the National Academy of Sciences of Ukraine Address: 41 Prospect Nauki, 03028, Kiev, Ukraine. Tel./Fax: (380-44) 525-83-38 E-mail: lab25@isp.kiev.ua Web-site: www.isp.kiev.ua