NANOTECHNOLOGIES · RESEARCH ON NANOCOMPOSITES
SEMICONDUCROR/OXIDE NANOCOMPOSOTE MATERIALS FOR RANDOM LASER
APPLICATIONS
Description
The design of the resonator in semiconductor lasers is
crucial for achieving low threshold for the onset of laser
action and a smaller volume of active material. The design
of the resonator on highly scattering disordered media is
a most easy and cost-effective way to produce a laser
resonator. Semiconductor/oxide nanocomposites pro-
duced on porous semiconductor and dielectric templates
offer possibilities to design a wide range of random laser
resonators. Media with controlled light scattering proper-
ties are prepared by electrochemical dissolution of semi-
conductor substrates, or by electrochemical oxidation of
metallic foils. The morphology of the porous template is
modeled either in the form of two dimensional structures
with pores of controlled cross section stretching perpen-
dicular to the substrate surface, or in the form of three
dimensional structures containing crossing pores. The
characteristic dimensions of the porous skeleton structure
and the diameter of pores is varied from 20 to 500 nm
(Fig. 1) in function of the required light scattering proper-
ties. For the introduction of optical gain properties to
highly scattering medium, porous semiconductor GaP,
GaAs, InP and ZnSe as well as dielectric Al2O3 and TiO2
templates are doped with rare earth elements (Eu, Er)
and transition metals (Cr, Ti).
A variety of ZnO micro/nanostructures which act as
laser resonators sustaining guided modes, whispering
gallery modes, random lasing and a combination of them
are produced by modifications of chemical vapour depo-
sition (CVD) including low pressure CVD, atmospheric
pressure metal-organic CVD and carbothermal evapora-
tion (Fig. 2). The technology ensure high optical quality
of the produced nanostructures to act as gain medium for
stimulated emission in combination with high quality
factor laser resonators.
Innovative Aspect and Main Advantages
One of the most important advantages of the technology
proposed for the production of random laser media as
compared to the state of the art analogues is the com-
patibility with optoelectronic and photonic circuit integra-
tion. Another advantage is the simplicity and cost effec-
tiveness of the developed photon-assisted electrochemical
methods for preparation of porous semiconductor tem-
plates, technological methods for the preparation of laser
active nanocomposite media, and technologies for the
production of a variety of lasing ZnO nanostructures.
The electrochemical methods provide possibilities to con-
trol the degree of order and to produce random media
with controlled morphology starting from discrete scat-
terers with strong short-range disorder, up to smooth
long-range inhomogeneity in weakly disordered media.
The electrochemical technologies can be applied with
neutral, environmentally friendly electrolytes. Another
advantage of the proposed approach is the possibility to
combine the traditional lithographic methods for the de-
sign of semiconductor substrates with non-lithographic
electrochemical methods of nanostructuring, i. e. the re-
gion of the semiconductor substrate to be nanostructured
can de defined by lithography, and the porosity can be
introduced in the defined regions by electrochemistry.
Areas of Application
In comparison with the previously developed random lasers
on powders and organic materials, the elaboration of ran-
dom lasers on semiconductor substrates opens possibilities
for electrical pumping instead of optical pumping, which is
very important for optoelectronic applications.
Apart from photonic and optoelectronic applications the
random lasers are suitable for document encoding and ma-
terial labeling, biomedical diagnostic, absorption spectros-
copy and chemical identification.
Fig.1. 2-D Er and Eu doped semiconductor/oxide nano-
composites based on porous GaP layers.
Fig.2. 3-D microstructures consisting of lasing ZnO
nanorods.
Stage of Development
The methods of producing random laser media based on
semiconductor and dielectric templates as well as semicon-
ductor/oxide nanocomposites are protected by Moldova
Patents No 3705, 3711, 3789, 3811, 3822.
The results of characterization are published in:
- Phys. Stat. sol. (RRL) 1, No. 1 (2007) R13-R15, “Er- and
Eu-doped GaP-Oxide porous composites for optoelec-
tronic applicationsâ€.
J. Opt. A:Pure Appl. Opt. 9 (2007) 401-404
“Red and green nanocomposite phosphors prepared on
porous GaAs templatesâ€.
J. Opt. A: Pure Appl. Opt. 11 (2009) 075001. “Whisper-
ing gallery modes and random lasing in ZnO microstruc-
tures.
J. Phys. D.: App. Phys. 42 (2009) 095106.
“A comparative study of guided modes and random
lasing in ZnO nanorod structuresâ€.
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Contact Details
Contact person: Veaceslav Ursachi
Institute of Applied Physics, Academy of Sciences of
Moldova.
Address: Chisinau 2028, Academy str. 5, r. 245
Tel.: (373-22) 23-75-08; 73-86-05
fax.: (373-22) 73-81-50;
E-mail: ursaki@yahoo.com
Web-site: www.phys.asm.md
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