IDEA #5IHL01 Nanotechnologies based on magnetron sputtering (MS) and plasma enhanced chemical vapor deposition (PECVD). Nanocomposite, nanolayered wear-resistant coatings and semiconductor films

Nanotechnologies based on magnetron sputtering (MS) and plasma enhanced chemical vapor deposition (PECVD). Nanocomposite, nanolayered wear-resistant coatings and semiconductor films. DESCRIPTION The developed magnetron sputtering installation enables one to deposit nanocomposite and composite nanolayered coatings under specific conditions (low pressure, moderate substrate low power etc.). The deposition conditions provide high- quality sputtered species and promote the formation of sharp interfaces without micro-voids. There are technologies for the production of different targets for sputtering in our institution. temperatures, Innovative Aspects and Main Advantages: • Low pressure (10-3-10-4 Tor) and low tempera- ture (300 -500 0C) of MS deposition • New nanolayered superhard coatings (hard- ness ~ 40 GPa) • The thermostable (above 1000 °C) amorphous and nanostructured semiconductor PECVD films that combine high semiconductor per- formance and high hardness (up to 34 GPa). Areas of Application: Superhard, wear-resistant and protective coatings that operate at elevated temperatures (800-1000 0C). Semiconductor hard films based on Si, SiC, SiCN, as well as Si:H, SiC:H, SiCN:H can be used in MEMS, solar cells, light emitting diodes and as protective films on semiconductor devices that operate in outer space. Fig. 1Developed magnetron sputtering installation Fig. 2 Two magnetron devices for sputtering The PECD technique enables one to deposit vari- ous nanostructured and amorphous semiconductor films using different gaseous and liquid precursors. In particular, Si, SiC and SiCN films can be pre- pared using such main precursors as SiH4, CH4, CH3SiCl3, (CH3)6Si2NH and others. Carrier gases can be hydrogen, nitrogen or helium. To improve semiconductor properties the hydrogenated films can be deposited at low substrate temperatures, TS<400 0C. Fig. 3 Cutters of hard alloy covered by the devel- oped coatings Fig. 4 Solar module based on the n a-SiC:H/p c-Si heterostructure Stage of Development: The design, production and test of the deposition installations were finished. Different coatings were developed and prepared (cf. Table). Work on the de- velopment of these technologies was fulfilled under the auspices of the STCU Contracts No. 1590, 1591, 4682, 5539, 5964; CRDF Contract UK-U2-2589-KV- 04; the Instituten Contracts III-15-09, III-8-09, III-28-12C, III-12-12. Table. Characteristics of the developed coatings. Denotation: H-nanohardness, E-elastic modulud, µ -friction coef- ficient, a-amorphous, nc-nanocrystalline, nl-nanolayered, y-b-r-g –yellow-blue-red-gold. Thickness ~ 0.8-1.2 µm. Roughness RMS = 0.2-0.3 nm (Si-C-N); 0.4-6.0 nm (nc, nl). Energy gap 1.5-2.8 eV (Si-C-N). Coating SiC, SiCN SiC:H, SiCN:H nc-TiN/a-SiNx nl-TiN/a-SiCN nc-TiN/a-BCN nl-TiN/a-BCN nl-TiN/SiC nc-NbN/a-SiNx nc-NbN/a-AlN AlMgB14 AlMgB14 – B4C AlMgB14 – Ti BCN nl-AlN/BCN H (GPa) 20-34 18-24 34-38 28-30 29-40 30-36 30-40 28-34 28-33 16-29 24-32 22-26* 16-18* 26* Remark a, nc; µ=0.04-0.1 a, nc; µ=0.07-0.09 µ=0.08-0.1 µ=0.08-0.12 µ=0.06-0.09 µ=0.08-0.10 µ=0.08-0.13 µ=0.11-0.16 µ=0.08-0.16 a; µ=0.08-0.1 a; µ=0.08-0.1 a; µ=0.09-0.11 a; µ=0.1-0.12 a; µ=0.12 Color E (GPa) 160-250 Transparent 120-220 Transparent 280-340 260-280 280-350 340-380 300-480 300-350 320-340 200-260 280-300 y-b-g y-b-g y-b-g y-b-g y-b-g y-b-r y-b-r y-r-b y-r-b y-r-b y-b-r-g - - - y-b *Microhardness (Hµ). For all coatings, values of Hµ were higher than values of H by ~ 20-30 %. Contact Addresses: Frantsevich Institute for Problems of Material Science, National Academy of Sciences of Ukraine, De- partment of Material Science of Refractory Compounds, Krzhyzhanovsky Str. 3, 03142, Kyiv, Ukraine. Tel. +38 044 3901135 Fax: +38 044 4242131 Contact persons: Dr.Volodymyr I. Ivashchenko, Tel. +38 050 1442687 Fax: +38 044 4242131 E-mail: ivashchenko@icnanotox.org