IDEA #7XEO9S Microwave Microscope For Nanotechnology

NANOTECHNOLOGY • APPLICATIONRESEARCH FOR NANOELECTRONICS MICROWAVE MICROSCOPE FOR NANOTECHNOLOGY Description Microwave microscope is the device for the express, non(cid:2) destructive and precise analysis of the materials and structure parameters used in micro(cid:2) and nanoelectronics. Alongside with the high measurements locality the scanning microwave microscopy technique allows to study the surface distributions of the electrophysical semiconductor parameters: dielectrical permittivity, electrical conductivity, lifetime of the non(cid:2)equilib(cid:2) rium carriers’ etc. Unlike the others scanning microscopy tech(cid:2) niques (tunnel, atom(cid:2)force) there is no need to use the high(cid:2) cost vacuum and high(cid:2)voltage equipment, contactless meas(cid:2) urements are provided. The microwave microscope resolution can be enhanced using the new image reconstruction algorithm based on the com(cid:2) plexity theory and inverse problems solution methods. We have developed the microwave microscope used the mil(cid:2) limeter(cid:2)wavelength coaxial measuring aperture resonator sensor. It allows to graduate the sensor theoretically and to provide the high measurements locality because of using the tip(cid:2)sharpened central coaxial conductor as microprobe. Innovation aspects and main advantages Technological: • solid(cid:2)state microwave source with a high frequency stabili(cid:2) ty; • novel measuring resonator with coaxial aperture; • < 1 micrometer resolution; • no need high voltage; • computer results processing. Perspective: • non(cid:2)termal and contactless surface modification; • IC structures forming. Economical: • cheaply than the scanning tunnel microscope for the non(cid:2) atomic resolution; • no need vacuum equipment. We propose: • the space distribution analysis: • dielectric permittivity; • dielectric losses; • nonequilibrium carriers lifetime • other parameters of dielectrics, semiconductors and nan(cid:2) oclusters with a high locality; • quantitative IC and MEMS topography imaging. Areas ooff Application Application research for nanoelectronics. 158 Stage ooff Development Experimental setup Contact Details Vice(cid:2)rector, Ph.D., Prof. Nikolay I. Slipchenko, Kharkiv National University of Radio Electronics Ukraine, 14 Lenin Ave., UKR(cid:2)61166 Kharkiv, TEL: +38057(cid:2)7021362, +38057(cid:2)7021413, FAX: +38057(cid:2)7021013. E(cid:2)Mail: rector@kture.kharkov.ua, Web: http://www.kture.kharkov.ua