Method of varying of the carrier concentration of PbSnSe epitaxial films
Stage of Development:
• The offered technology has been tested by
laboratory investigations, in the frame of STCU-
3641 Project implementation.
• Has been received patents of Georgia and
Azerbaijan
• Two electronic companies in Baku “Industrial
Automatics†and “AZON†plant have shown the
big interest to the offered way.
Photos/Pictures:
it means
aspect
Description:
Important part of any semiconductor device is the
active element - epitaxial film. For increase of
efficiency of the device technologists achieve to
reduce operating voltage and increase working
temperatures of an active element. In technological
language
- decrease of carriers
concentration and stabilization of Fermi level in
epitaxial films. The offered method of regulation of
carriers concentration in epitaxial films PbSnSe
allows to decrease concentration more than 100
times and to reach working temperatures more than
80 degrees on Calvin. For preparation of such
epitaxial films is provided to carry out following
operations: On oriented substrate BaF2, by
evaporation is settled binary components PbSe and
SnSe, doped by chrome and indium. For creation of
necessary pressure of vapor the additional source of
selenium is used. The special regime of temperature
of a substrate, sources of binary components and
selenium for the purpose of reception thin and
continuous epitaxial films is picked up.
Innovative
advantages:
the source
Novelty of
the
represents doped by chrome and indium alloys
temperature
PbSnSe and specially picked up
regime.
differences
of
lattice
parameters of the picked up structure of an alloy
and a substrate leads to reception strained epitaxial
films. In such films Fermi level are displaced
deeply in the band gap zone and stabilized. As a
result of mutual compensation of impurity of
chrome and
indium concentration of carriers
decreases more than 100 times. Stabilization of
Fermi level allows to increase working temperatures
of prepared active element. According to the carried
researches the basic advantage of the offered
method consists in preparation thin epitaxial layers
with
low carriers concentration and working
temperatures more than 80 degrees on Calvin.
Areas of Application:
The basic spheres of application are the creation of
the high-sensitive infrared-detectors:
•
for background streams 1017 photon/sec.sm2
(room temperature);
for a level of a background 1013
photon/sec.sm2 (for space conditions).
and main
Insignificant
invention
is
that
•
Contact details:
Professor Vugar Aliyev
STCU-3641 Project Sub-Manager
Institute of Physics ANAS
33, Cavid ave., Baku, AZ-1143, Azerbaijan
Tel.: +99412 418-3963; E-mail: vugar@lan.ab.az
Targeted Companies:
Plant “INDUSTRIAL AUTOMATICSâ€
22, Safaraliyev St., Baku, AZ 1010, Azerbaijan
Phone: +99412 498-1823; Fax.: +99412 493-6771;
E-mail: cavadov_natiq@mail.az
AZON Plant at the Ministry of Defensive Industry
of Azerbaijan Republic
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