Material for uncooled microbolometers
the development up to industry (manufacture of
array or matrix microbolometer detectors) is
possible in cooperation with firm-manufacturer of
uncooled thermovision systems or with firm in
which CMOS technology is used.
Photos/Pictures:
Description:
Uncooled infrared microbolometer detectors have
recently gained wide attention for infrared
imaging applications, due to their advantages such
as low cost, low weight, low power, large spectral
response, and long term operation. The sensitive
element of a microbolometer usually contains a
thermosensitive layer with high value of
temperature coefficient of resistance (TCR) and
absorbing coating. However presence of
additional layers essentially complicates
manufacturing techniques, increases a thermal
capacity of microbolometer and worsens its
characteristics.
To solve this problem we have developed
composite metal-dielectric films deposited in
vacuum. Such films are characterized by high
selective absorption (up to 85%) in IR - spectral
area (8 – 12 mkm) which is combined with
acceptable values of TCR. Varying the contents
of metal in metal-dielectric film it is possible to
change its resistivity in very wide limits: from
characteristic for dielectric-oxide up to metal, and
obtain TCR at room temperature up to 2-3%K-1.
The purpose of the offered project consists in
creation of microbolometer thermosensitive
element (pixel) on the basis of metal - dielectric
films. Microbolometer pixel is formed with use of
CMOS technology as a membrane of silicon
nitride on which the sensitive layer and contacts
are located.
Innovative aspect and main
advantages:
Offered thermosensitive layers have the
following advantages: high stability of physical
and chemical properties, absence of toxic
components, compatibility with IC fabrication
technology, low commercial cost. It allows to
realize on one layer absorption of IR - radiation
and formation of an electric signal.
Areas of Application:
Production of uncooled infrared microbolometer
detectors
Stage of Development:
Technology is patented, prototype samples of
thin-film bolometers are made and tested. Bring
Temperature dependence of resistivity and TCR
of composite film
Contact details:
V. Lashkaryov Institute of Semiconductor Physics
NAS of Ukraine
Ivan Indutnyy
Prof., Head of department
Prosp. Nauki, 45, Kyiv, 03028, Ukraine
Tel/Fax: 5256342
E-mail: indutnyy@isp.kiev.ua
www.isp.kiev.ua
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