IDEA #61IX5N Infrared Detector with Low Carrier Concentration on the Basis of PbSnSe Epitaxial Film

Infrared Detector with Low Carrier Concentration on the Basis of PbSnSe Epitaxial Film Stage of Development: • The offered IR-detectors have been tested by laboratory investigations, in the frame of STCU- 3641 Project implementation. • Has been received patents of Georgia and Azerbaijan on technology. • Two electronic companies in Baku “Industrial Automatics” and “AZON” plant have shown the big interest to the offered way. Photos/Pictures: large Description: IR-detectors has spheres of application. Important part of any IR-detector is the active element - epitaxial film. For increase of efficiency of the device technologists achieve to reduce operating voltage and increase working temperatures of an active element. In technological language it means - decrease of carriers concentration and stabilization of Fermi level in epitaxial films. The offered IR-detector and new technology of regulation of carriers concentration in epitaxial films PbSnSe allows to decrease concentration more than 100 times and to reach working temperatures of IR- detector more than 80 degrees on Calvin. For preparation of such IR-detectors is provided to carry out following operations: On oriented substrate BaF2, by evaporation is settled binary components PbSe and SnSe, doped by chrome and indium. For creation of necessary pressure of vapor the additional source of selenium is used. The special regime of temperature of a substrate, sources of binary components and selenium for the purpose of reception thin and continuous epitaxial films is picked up. Innovative aspect and main advantages Novelty of the invention is that offered IR-detectors has more than 80K working temperatures and low carrier concentration. The main achievement in creation of proposed detectors is technological “know- how”. So, the source of materials of active elements of IR-detector represents doped by chrome and indium alloys PbSnSe and specially picked up temperature regime. Insignificant differences of lattice parameters of the picked up structure of an alloy and a substrate leads to reception strained epitaxial films. In such films Fermi level are displaced deeply in the band gap zone and result of mutual compensation of impurity of chrome and indium concentration of carriers decreases more than 100 times. Stabilization of Fermi level allows to increase working temperatures of prepared active element. According to the carried researches the basic advantage of the offered IR-detectors consists in active elements with low carriers concentration and working temperatures more than 80 degrees on Calvin. Areas of Application: The basic spheres of application of offered IR - detectors: • for background streams 1017 photon/sec.sm2 (room stabilized. As a • for a level of a background 1013 photon/sec.sm2 (for temperature); space conditions). Fig.1. Technology equipment Fig. 2. Laboratory samples of IR-detectors Contact details: Professor Vugar Aliyev STCU-3641 Project Sub-Manager Institute of Physics ANAS, 33, Cavid ave., Baku, AZ-1143, Azerbaijan, Tel.: +99440 218-3963; E-mail: vugar@lan.ab.az Targeted Companies: Plant “INDUSTRIAL AUTOMATICS” 22, Safaraliyev St., Baku, AZ 1010, Azerbaijan Phone: +99412 498-1823; Fax.: +99412 493-6771; E- mail: cavadov_natiq@mail.az AZON Plant at the Ministry of Defensive Industry of Azerbaijan Republic