IDEA #8PK4U6 High_Field Nanotechnology For Processing A Metal Surface

NANOTECHNOLOGY • APPLICATIONRESEARCH IINN THEFIELD OOFF NANOTECHNOLOGYHIGH(cid:2)(cid:2)FIELD NANOTECHNOLOGY FOR PROCESSING AA METAL SURFACE Description Various modifications of method of evaporation in high elec(cid:2) tric fields are the most promising methods of forming surface of different objects of nanometer(cid:2)scale. However, the main obstacle to the use of this method is the necessity of creation of super high electric fields on a surface of the object subject(cid:2) ed to processing. In such fields there are serious technological problems connected with the destruction of objects under the action of mechanical stress generated by the electric field. In this connection, we propose to use phenomenon of high(cid:2)field evaporation of metals in dielectric liquids at low temperatures. This phenomenon was revealed and studied by our team together with University of Surrey School of Electronic (Surrey, UK) and Hahn(cid:2)Meitner(cid:2)Institute (Berlin, Germany). This phe(cid:2) nomenon and process of field evaporation in active gases could be used for controlled forming of metal objects with the sizes in a nanometer range. The magnitude of electric fields below the level of field evaporation in high vacuum is required for the realization of high(cid:2)field evaporation of metals in dielec(cid:2) tric liquids. This opens up technological prospects for practical use of this phenomenon. Innovative Aspect and Main Advantages:: • formation of surface with a zero(cid:2)level roughness (atomical(cid:2) ly smooth metal surface) • high degree of localization of field emission • atomic sharpness of STM probes • lowering traumatic effects of microsurgical instruments Areas ooff Application:: • field emitters • probes for scanning tunneling microscopy and nanotech(cid:2) nology • microsurgical instruments with qualitative changes of a roughness level Pic. 1. Field ion microscopic images of STM probe before high(cid:2)field sharpening Pic. 2. Field ion microscopic images of STM probe after high(cid:2)field sharpering Stage ooff Development:: Patents received: • Method of fabrication of tip objects, Patent of Ukraine, UA 6607 U, 16.05.2005, Velikodnaya O.A., Ksenofontov V.A., Mikhailovskij I.M., Sadanov E.V. • Method of fabrication of tip objects, Patent of Ukraine, UA 8336 U, 15.07.2005, Velikodnaya O.A., Ksenofontov V.A., Mikhailovskij I.M., Sadanov E.V. Contact Details:: National Scientific Center, "Kharkov Institute of Physics and Technology" 1 Akademicheskaja St., 61108 Kharkov, Ukraine Ksenofontov Vyacheslav Alekseevich Tel. +380 57 7002676; +380 57 7576428 Fax:+380 57 3351688 E(cid:2)mail:mikhailovskij@kipt.kharkov.ua 168