THE SCIENCE AND TECHNOLOGY CENTER IN UKRAINE
EXTREMELY LARGE HIGH QUALITY SAPPHIRE CRYSTAL PRODUCTION
Description
Sapphire (α(cid:28)Al2O3) is characterized by high optical trans(cid:28)
parency, wear(cid:28), heat(cid:28), chemical resistance, high heat con(cid:28)
duction and unique dielectric characteristics. Such combi(cid:28)
nation of properties makes it an indispensable material for
making highly integral microcircuits, input windows of
semiconductor and electrical vacuum devices, technologi(cid:28)
cal lasers, optical devices operating under extreme condi(cid:28)
tions. The fields of sapphire application are constantly
broadened. A technology is proposed for the growing of
high optical quality sapphire single crystals 215x215x30
mm by the horizontal oriented crystallization (HOC) in
protective gas medium. The proposed technology is direct(cid:28)
ed toward using a low(cid:28)pressure, protective gas medium in
the dynamic pumping regime. Besides other advantages,
this makes possible a partial substitution of metallic heat(cid:28)
ing equipment using cheaper carbon.
Innovative Aspect and Main Advantages
One of the main advantages of this technology – a possi(cid:28)
bility to use cheap raw material with a higher concentra(cid:28)
tion of impurities. Due to intensive evaporation from the
melt during melt crystallization (the ratio of the melt area
to its volume (S/V), the impurities level is the biggest in
the HOC method, as compared to other technologies.
Additionally, the development of this method was followed
by the replacement of high vacuum by the CO gas atmos(cid:28)
phere, which allowed to make HOC method one of the
most efficient one for growing extremely large sapphire
crystals with (0001) orientation. Main characteristics of
the crystals:
· transparency in the UV(cid:28)region: > 70%;
· uniformity of optical characteristics in the UV(cid:28)region:
<10%;
· twins, blocks and regions with high stresses are absent;
· the chemical purity of the material: 99.99%.
Areas of Application
Sapphire single crystals of a large size are of interest for
many industries, but the best suited for optics and opto(cid:28)
electronics. The performed marketing investigations show
that the large(cid:28)size sapphire crystals are promising for
application of this material in:
· in large(cid:28)size (50… 220 mm) optics (transparent windows,
screens, glasses) for working under extreme conditions and
possessing long(cid:28)term service life;
· in a field of optoelectronics, such as (0001)(cid:28)oriented sub(cid:28)
strates for light(cid:28)emitting diodes (LED's); extremely bright
screens with a diameter of 3â€(cid:28)4â€; electroluminescent
sources of light, etc.
Stage of Development
The experimental equipment and several batches of sam(cid:28)
ples are available. A business(cid:28)plan for organization of pilot
production of sapphire crystals at the STC "Institute for
Single Crystals" on the basis of the new generation instal(cid:28)
lations "Horizont(cid:28)2" is developed. Nowadays the output of
the pilot plant is 5000 kg of sapphire single crystals per
year. A wide variety of large size sapphire articles
(50...220mm in diameter) for optics and optoelectronics is
produced and delivered to USA, France, Germany, Israel,
Taiwan etc.
Contact Details
Olexander Dan'ko
Department of Optical and Constructional Crystals
Science and Technology Concern "Institute for Single
Crystals", Kharkiv
Теl: (380) 57 341(cid:28)02(cid:28)78
Fax: (380) 57 340(cid:28)86(cid:28)19
E(cid:28)mail: danko@isc.kharkov.ua
Fig. 1. Sapphire elements for optics and optoelectronics
Fig. 2. New%generation apparatuses "Gorizont%2" for the
growth of sapphire crystals measuring 250××300××30 mm
74
SCIENCE AND INNOVATION. Special Issue, 2007
For more information or to license this innovation:
- Log In
to view the innovation's details
- Sign Up
with discount code "ECOS"